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| MMBT3906W General Purpose Transistor PNP Silicon COLLECTOR 3 3 1 BASE 2 EMITTER 1 2 SOT-323(SC-70) Unit Vdc Vdc Vdc mAdc M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40 -5.0 -200 Thermal Characteristics Characteristics Total Device Dissipation TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R qJA TJ,Tstg Max 150 833 -55 to +150 Unit mW C/W C Device Marking MMBT3906W=2A Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Off Characteristics Collector-Emitter Breakdown Voltage(2) (IC=-1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=-10 Adc, IE=0) Emitter-Base Breakdown Voltage (IE=-10 Adc, IC=0) Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc) Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc) 1. Device mounted FR4 glass epoxy printed circuit board suing the minimun recommended footprint. 2. Pulse Test:Pulse Width < 300 S, Duty Cycle < 2.0%. = = V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX -40 -40 -5.0 -50 -50 Vdc Vdc Vdc nAdc nAdc - http://www.weitron.com.tw WEITRON MMBT3906W Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit On Characteristics (2) DC Current Gain (IC= -0.1 mAdc, VCE= -1.0Vdc) (IC= -1.0 mAdc, VCE= -1.0 Vdc) (IC= -10 mAdc, VCE= -1.0Vdc) (IC= -50 mAdc, VCE= -1.0Vdc) (IC= -100 mAdc, VCE= -1.0Vdc) Collector-Emitter Saturation Voltage (2) (IC= -10 mAdc, IB= -1.0mAdc) (IC= -50 mAdc, IB= -5.0mAdc) Base-Emitter Saturation Voltage (2) (IC= -10 mAdc, IB= -1.0 mAdc) (IC= -50 mAdc, IB= -5.0 mAdc) VCE(sat) HFE 60 80 100 60 30 -0.65 - 300 -0.25 -0.4 -0.85 -0.95 Vdc - VBE(sat) Vdc Small-signal Characteristics Current-Gain-Bandwidth Product (IC= -10 mAdc, VCE= -20 Vdc, f=100MHz) Output Capacitance (VCB= -5.0 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB= -0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (VCE= -10 Vdc IC=-1.0 mAdc, f=1.0 kHz) Voltage Feeback Radio (VCE= -10Vdc IC=1.0 mAdc, f=1.0 kHz) Small-Signal Current Gain (VCE= -10Vdc IC=1.0 mAdc, , f=1.0 kHz) Output Admittance (VCE= -10Vdc IC=1.0 mAdc, f=-1.0kHz) Noise Figure (VCE= -5.0Vdc IC= -100 Adc, , RS=1.0k ohms, f=1.0kHz) fT Cobo Cibo hie hre hfe hoe NF 250 2.0 0.1 100 3.0 4.5 10 12 10 400 60 MHz pF pF k ohms x 10-4 mhos dB 4.0 Switching Characteristics Delay Time Rise Time Storage Time Fall Time (Vcc= -3.0 Vdc, VBE= 0.5 Vdc Ic= -10 mAdc, IB1= -1.0 mAdc) (Vcc= -3.0 Vdc, Ic= -10 mAdc, IB1=IB2= -1.0 mAdc) td tr ts tf 35 35 225 75 ns ns http://www.weitron.com.tw WEITRON MMBT3906W 3V 275 10k CS<4 pF 10.6V 300 ns DUTY CYCLE=2% 10 *Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure . Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ=25 C 10 7.0 5000 3000 2000 TJ=125 C CAPACITANCE (pF) VCC=40V IC/IB=10 Q CHARGE (pC) 5.0 Cobo Cibo 1000 700 500 300 200 100 3.0 2.0 QT Q A 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSEM BIAS (VOLTS) IC COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 500 300 200 IC/IB=10 500 300 200 tf FALL TIME (ns) IC/IB=20 VCC=40V IB1=IB2 100 100 70 50 30 20 10 7 5 TIME (ns) 70 50 30 20 10 7 5 tr@VCC=3.0V 15V 40V 2.0V td@VOB=0V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC COLLECTOP CURRENT (mA) 200 IC/IB=10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 Figure 5. Turn-On Time IC COLLECTYOR CURRENT (mA) Figure 6.Fall Time http://www.weitron.com.tw WEITRON MMBT3906W TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE= -5.0 Vdc, TA= 25 C, Bandwidth= 1.0Hz) 5.0 NF NOISE FIGURE (dB) SOURCE RESISTANCE=2001/2 IC=0.5 mA SOURCE RESISTANCE=2.0 k IC=50 A NF NOISE FIGURE (dB) 4.0 SOURCE RESISTANCE=2001/2 IC=1.0 mA 12 f=1.0 kHz 10 IC=1.0mA IC=0.5mA 8 6 IC=100A 3.0 2.0 4 2 0 IC=50A 1.0 SOURCE RESISTANCE=2.0 k IC=100 A 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f FREQUENCY (kHZ) Figure 7. Rg SOURCE RESISTANCE (k OHMS) Figure 8. h PARAMETERS 300 (VCE= -10 Vdc, f= 1.0 kHz, TA= 25 C) 100 hoe OUTPUT ADMITTANCE ( mhos) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0 70 50 30 20 hfe DC CURRENT GAIN 200 100 70 50 10 7 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0 30 IC COLLECTOR CURRENT (mA) Figure 9. Current Gain Figure 10. Input Impedance IC COLLECTOR CURRENT(mA) hfe VOLTAGE FEEBACK RATIO (X 10x4) 20 10 7.0 5.0 3.0 2.0 hfe INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure .11 Input Impedance IC COLLECTOR CURRENT (MA) IC COLLECTOR CURRENT (mA) Figure 12. Votage Feeback Ratio http://www.weitron.com.tw WEITRON MMBT3906W TYPICAL STATIC CHARACTERISTICS hFE DC CURRENT GAIN (NORMALIZED) 2.0 TJ=+125 C +25 C VCE=10V 1.0 0.7 -55 C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 Figurer 13. DC Current Gain VCE COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 IC COLLECTOR CURRENT (mA) TJ=25 C 0.8 IC=1.0mA 10mA 30mA 100mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region 1.0 TJ=25 C VBE(sat) @ IC/IB=10 IB BASE CURRENT (mA) qv TEMPERATURE COEFFICIENTS (mVAC) 1.0 0.5 0 -0.5 +25 C TO +125 C -1.0 -55 C TO +25 C -1.5 -2.0 qVB FOR VBE(sat) V VOLTAGE (VOLTS) 0.8 VBE(sat) @VCE=1.0V 0.6 qVC FOR VCE(sat) +25 C TO +125 C -55 C TO +25 C 0.4 VCE(sat) @ IC/IB=10 0.2 0 10 20 50 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC COLLECTOR CURRENT (mA) Figure 15. "ON" Voltages Figure 16.Temperature Coefficients IC COLLECTOR CURRENT (mA) http://www.weitron.com.tw WEITRON MMBT3906W SOT-323 Outline Demensions Unit:mm A T OP V IE W B C D E G H K L J M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON http://www.weitron.com.tw |
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